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1 1999-10-07 spu01n60s5 spd01n60s5 preliminary data cool mos ? power-transistor new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme d v /d t rated optimized capacitances improved noise immunity former development designation: spux7n60s5/spdx7n60s5 g,1 d,2 s,3 c power semiconductors o o l mos type v ds i d r ds(on) package marking ordering code spu01n60s5 spd01n60s5 600 v 0.8 a 6 w p-to251-3-1 p-to252 01n60s5 01n60s5 q67040-s4193 q67040-s4188 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 0.8 0.5 a pulsed drain current, t p = 1ms 1) t c = 25 c i d puls 1.6 avalanche energy, single pulse i d = 0.8 a, v dd = 50 v, r gs = 25 w periodic avalanche energy e ar only limited by t jmax e as 20 mj reverse diode d v /d t i s = 0.8 a, v ds < v dss , d i /d t = 100 a/s, t jmax = 150 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 11 w operating and storage temperature t j , t stg -55 ...+150 c
2 1999-10-07 spu01n60s5 spd01n60s5 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 11 k/w thermal resistance, junction - ambient (leaded and through-hole packages) r thja - - 75 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 static characteristics , at t j = 25 c, unless otherwise specified drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 600 - - v gate threshold voltage, v gs = v ds i d = 250 a, t j = 25 c v gs(th) 2.3 3 3.7 zero gate voltage drain current, v ds = v dss v gs = 0 v, t j = 25 c v gs = 0 v, t j = 150 c i dss - - 0.5 - 1 50 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - - 100 na drain-source on-state resistance v gs = 10 v, i d = 0.5 a r ds(on) - 5.6 6 w 1 current limited by t jmax 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
3 1999-10-07 spu01n60s5 spd01n60s5 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 0.5 a g fs - 0.75 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 100 - pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 70 - reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 7 - turn-on delay time v dd = 350 v, v gs = 10 v, i d = 0.8 a, r g = 100 w t d(on) - 30 - ns rise time v dd = 350 v, v gs = 10 v, i d = 0.8 a, r g = 100 w t r - 15 - turn-off delay time v dd = 350 v, v gs = 10 v, i d = 0.8 a, r g = 100 w t d(off) - 60 - fall time v dd = 350 v, v gs = 10 v, i d = 0.8 a, r g = 100 w t f - 20 -
4 1999-10-07 spu01n60s5 spd01n60s5 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. gate charge characteristics gate to source charge v dd = 350 v, i d = 0.8 a q gs - 0.95 - nc gate to drain charge v dd = 350 v, i d = 0.8 a q gd - 1.5 - total gate charge v dd = 350 v, i d = 0.8 a, v gs = 0 to 10 v q g - 2.9 - reverse diode inverse diode continuous forward current t c = 25 c i s - - 0.8 a inverse diode direct current,pulsed t c = 25 c i sm - - 1.6 inverse diode forward voltage v gs = 0 v, i f = 0.8 a v sd - 1 1.2 v reverse recovery time v r = 100 v, i f = i s , d i f /d t = 100 a/s t rr - 570 - ns reverse recovery charge v r = 100 v, i f = l s , d i f /d t = 100 a/s q rr - 0.75 - c
5 1999-10-07 spu01n60s5 spd01n60s5 preliminary data power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 1 2 3 4 5 6 7 8 9 10 w 12 spu01n60s5 p tot drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 a 0.9 spu01n60s5 i d safe operating area i d = f ( v ds ) parameter: d =0.01, t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a spu01n60s5 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 7.6 s transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 t p -3 10 -2 10 -1 10 0 10 1 10 2 10 spu01n60s5 single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
6 1999-10-07 spu01n60s5 spd01n60s5 preliminary data typ. output characteristic i d = f ( v ds ) parameter: v gs , t j = 25 c 0 4 8 12 16 20 v ds 28 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 8v 0 4 8 12 16 20 v ds 28 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 6v 7v 16v 12v 10v drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 0.5 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 w 18 r ds(on) typ. -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 w 18 r ds(on) 98% -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 w 18 r ds(on) typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max 0 4 8 12 16 v gs 24 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 a 2.0 i d typ. capacitances c = f ( v ds ) parameter: v gs =0 v, f =1 mhz 0 10 20 30 40 50 60 70 80 v 100 v ds 0 10 1 10 2 10 3 10 pf c ciss coss crss
7 1999-10-07 spu01n60s5 spd01n60s5 preliminary data avalanche energy e as = f ( t j ) par.: i d = 0.8 a, v dd = 50 v, r gs = 25 w 25 50 75 100 125 150 c 200 t j 0 2 4 6 8 10 12 14 16 18 mj 22 e as gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v gs , i d = 250 a -60 -20 20 60 100 c 180 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) typ. 98% 2% forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -2 10 -1 10 0 10 1 10 a spu01n60s5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) drain-source break down voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 500 520 540 560 580 600 620 640 660 v 700 v (br)dss
8 1999-10-07 spu01n60s5 spd01n60s5 preliminary data typ. gate charge v gs = f ( q gate ) parameter: i d = 0.8 a pulsed 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 nc 3.8 q g 0 2 4 6 8 10 12 v 16 spu01n60s5 v gs ds max v 0,8 ds max v 0,2
9 1999-10-07 spu01n60s5 spd01n60s5 preliminary data p-to251-3-1 dimensions [mm] symbol min max a 6.47 6.73 b 5.25 5.41 c 4.19 4.43 d 0.63 0.89 e f 2.18 2.39 g 0.76 0.86 h 1.01 1.11 k 5.97 6.23 l 9.14 9.65 m 0.46 0.56 n 0.98 1.15 2.29 t y p.
10 1999-10-07 spu01n60s5 spd01n60s5 preliminary data p-to252 dimensions [mm] symbol min max a 6.40 6.73 b 5.25 5.50 c (0.65) (1.15) d 0.63 0.89 e f 2.19 2.39 g 0.76 0.98 h 0.90 1.21 k 5.97 6.23 l 9.40 10.40 m 0.46 0.58 n 0.87 1.15 p0.51 - r5.00 - s4.17 - t 0.26 1.02 u- - 2.28
11 1999-10-07 spu01n60s5 spd01n60s5 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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